fdb9403_f085 n-channel power trench ? mosfet ?201 2 f a irchild se micondu ct or corp orat ion fdb940 3_f085 _f085 rev. c1 www.fairchildsemi.com 1 fdb9403_f085 n-channel power trench ? mosfet 40v, 110a, 1.2 m f eat ure s ? typ r ds(on) = 1m at v gs = 10v , i d = 8 0 a ? typ q g ( tot) = 164n c at v gs = 10v, i d = 8 0 a ? ui s capab ilit y ? ro h s co mplian t ? q uali f ie d t o ae c q1 01 appl ications ? au tomo tive en gine cont rol ? po w e rt rain mana gemen t ? so lenoi d a nd mot o r drivers ? el ect r o nic s t ee ring ? i n t egrat ed st ar ter / al ter nat or ? distr ibut ed po w e r archit ectu res a nd vrm ? p r imar y swit ch f o r 12 v syst ems mosfet maximum ratings t j = 25c unless o t herwise noted symbol parameter r atings uni t s v dss d r ain to sour ce v olt age 40 v v gs gate to s o urce v olt age 20 v i d d r ain c u rre nt - con t inuou s (v gs = 1 0 ) ( n o t e 1 ) t c = 2 5 c 11 0 a pulsed dra i n c urren t t c = 25 c see figure4 e as single pulse a v alanche ener gy (no te 2) 968 mj p d pow e r dissip ation 333 w d e rate a bove 2 5 o c2 . 22 w / o c t j , t st g oper atin g and s t orage t emper ature - 55 t o + 175 o c r jc t herma l resist ance junction to case 0.45 o c/w r ja ma ximum the r mal resist ance junction to ambient (note 3) 43 o c/w pac k a g e mar k ing and orde rin g inf o rma tion devic e marking d evice packa ge reel size t a pe wid t h q ua ntit y f d b9403 f d b9403_f 085 t o -263ab 33 0mm 24mm 800 u nit s notes: 1. current is limited by bondwire configuration. please see fairchild an 9757-1 for details on test method. 2: st ar t i n g t j = 25c, l = 0. 47mh, i as = 64 a, v dd = 4 0 v duri ng induct o r charg i ng and v dd = 0v du r i ng ti m e i n a v a l an ch e. 3: r ja i s t he su m of the junct i on-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. g s d d g s t o -263 ab fdb series aug 20 12 http://
fdb9403_f085 n-channel power trench ? mosfet fdb940 3_f085 rev. c 1 www.fairchil dsemi.c o m 2 electrical characteristics t j = 25c unless otherw i se noted of f ch ara c t e ri st ic s on cha r ac te ristic s dyn a mic ch arac te rist ic s symb ol param e ter t est co nd itio ns min t yp ma x u nit s b vdss dr ain to source breakdown v o lt age i d = 250 a, v gs = 0 v 4 0 - - v i dss dr ain to source leakage cur r ent v ds = 4 0 v , t j = 2 5 o c - - 1 a v gs = 0v t j = 17 5 o c(n o te 4) - - 1 i gss gate to sour ce l eakag e curr ent v gs = 2 0v - - 100 na v gs(t h) gate to sou r ce thr eshold v olt age v gs = v ds , i d = 250 2 .0 3.13 4.0 v r ds (o n ) d r ain to source on resist ance i d = 80a, v gs = 10v t j = 2 5 o c - 1 . 0 1 . 2 m t j = 17 5 o c(n o te 4) - 1 .63 1 .96 m c iss inp u t cap a cit ance v ds = 25v, v gs = 0v, f = 1mhz - 12700 - pf c os s output c ap acit a nce - 3195 - pf c rs s r ever s e t r an sfer cap acit ance - 493 - pf r g gate re sist ance f = 1mhz - 2 .9 - q g( t o t) t o t a l gate char ge at 10v v gs = 0 to 10v v dd = 20v i d = 80a - 164 213 nc q g( th) gs = 0 to 2v - 2 3 3 0 n c q gs gate to sou r ce gate charg e -5 9 - n c q gd gate to d r ain ?miller? char ge - 25 - nc switching characteristics drain- sourc e dio d e chara c t e rist ics note s: 4 : th e m a xi m u m va l u e i s spe c i f i ed by d e si gn at tj = 17 5c . pr od uct i s not test ed to thi s co nd it io n in pr o d uct i o n . t on tu r n - o n t i m e v dd = 20v , i d = 80a, v gs = 10v, r gs = 1.5 - - 56 ns t d(o n ) tu r n - o n de l a y ti m e - 1 6 - n s t r rise t i me - 19.5 - ns t d(o f f) tu r n - o f f de l a y t i m e - 6 1 - n s t f f a ll t i me - 4 6 - ns t of f t u r n -of f t i me - - 171 ns v sd sou r ce to dra i n d i ode v o lt age sd = 15a, v gs = 0v - - 0.80 v t rr r e ve rs e reco ver y t i m e i f = 80a, di sd /dt = 100 a / s - 96 125 ns q rr r e ve rse recover y c harge - 149 194 nc ma i sd = 35a, v gs = 0v - - 0.8 5 v i t h reshold gate char ge v ua
fdb940 3_f085 rev. c 1 www.fairchil dsemi.c o m 3 typical characteristics fi gure 1 . normal i ze d po we r dissipa tio n vs ca se temperat ure 0 25 50 75 100 125 150 175 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 power dissipation multiplier t c , c a se tem p e r a t ur e ( o c ) figure 2. maximum continuous drain current vs case temperature fi gu re 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0. 0 1 0. 1 1 si ngle pul se d = 0 . 5 0 0 . 2 0 0 . 1 0 0 . 0 5 0 . 0 2 0 . 0 1 no rmal i z e d t h e r mal im p e d a n c e , z jc t , re ct a n g ul a r p u ls e du r at i o n ( s ) dut y cyc le - desc end ing order note s: duty f act or: d = t 1 /t 2 pe ak t j = p dm x z ja x r ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance fi gu re 4 . pe a k curren t ca pa bi lit y 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 v gs = 10v s i n g le p u ls e i dm , peak curren t (a) t , re ct a n g u l a r p u l s e d ur at i o n ( s ) t c = 25 o c i = i 2 17 5 - t c 15 0 for temper a t ur es ab o ve 25 o c de ra te p e a k c urr e n t as fol l ows : 100 1000 note: refer to fairchild application notes an9757 2 5 50 75 1 00 12 5 15 0 17 5 20 0 0 10 0 20 0 30 0 40 0 50 0 cu rren t li mited by sil icon cu rre n t li m i t e d by package v gs = 10v i d , drain current (a) t c , case temperature( o c) fdb9403_f085 n-channel power trench ? mosfet
fdb940 3_f085 rev. c 1 www.fairchil dsemi.c o m 4 fi gu re 5. 11 01 0 0 0.1 1 10 100 100 0 10000 100us 1m s 10ms i d , drain cur rent (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds( on) single pulse t j = m ax rated t c = 25 o c dc forward bias safe operating area 1e-3 0.0 1 0 .1 1 10 100 1 000 100 00 1 10 10 0 10 0 0 start ing t j = 150 o c st a r t i n g t j = 2 5 o c i as , ava lan che cur rent (a ) t av , ti me in a v al anche ( m s ) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/ r)l n[(i as *r ) / ( 1 . 3 * r a t e d b v ds s - v dd ) +1] no te: ref e r t o fai rchild ap plicat ion not e s a n 7 514 an d a n 7515 fi gure 6 . unc la m pe d in du ct iv e swi t ch in g c ap abil ity fig u re 7 . 23456 0 50 10 0 15 0 20 0 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0. 5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) t r an sfer ch ara c teristics fi g u re 8 . 0.0 0 .2 0.4 0.6 0.8 1 .0 1.2 1 10 10 0 20 0 t j = 25 o c t j = 1 7 5 o c v gs = 0 v i s , reverse d ra in cur rent (a) v sd , bo dy dio d e fo rw ard v o lt ag e ( v ) forward diode characteristics typical characteristics fi gu re 9. 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 5v v gs 15v top 10v 6v 5.5v 5 v bottom 80 s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 5v 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 6v 5.5v 5v bottom 80 s pulse width tj=175 o c saturation characteristics fdb9403_f085 n-channel power trench ? mosfet
fdb940 3_f085 rev. c 1 www.fairchil dsemi.c o m 5 fi gu re 11 . 246810 0 2 4 6 8 10 i d = 80 a pu l se d u r a t i on = 8 0 s dut y cy cl e = 0 . 5 % m ax r ds(o n) , drain to source on-resistance ( ) v gs , g a te to s o u r c e v o lta g e ( v ) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 pulse duration = 80 s duty c ycle = 0.5% max i d = 8 0 a v gs = 1 0 v normalized dra in to source on-resistance t j , j u n c ti o n te m p e r a tu r e ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0. 4 0. 6 0. 8 1. 0 1. 2 v gs = v ds i d = 2 5 0 a normalized gate threshold voltage t j , j unct i o n t e m p e ra t ure ( o c) no rmalized gate th re sho l d voltag e vs te mpe r at ure figure 14. -80-40 0 40 80120160200 0. 8 0. 9 1. 0 1. 1 1. 2 i d = 1 m a nor malized drain to source breakdown voltage t j , j unc t i o n t e m p e r a t ure ( o c) norma lized dr ain to source breakdown voltage vs junction temperature fi gu re 15 . 0.1 1 10 100 100 10 0 0 100 0 0 1000 0 0 f = 1 m h z v gs = 0v c rs s c oss c iss capacitance (pf) v ds , dra i n t o s o u rce v o l t ag e ( v ) c apa citanc e vs dra i n to so ur ce voltage figure 16. 0 50 100 150 200 0 2 4 6 8 10 i d = 80a v dd = 16v v dd = 20v v dd = 24v q g , ga t e c h a r ge ( n c ) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics fdb9403_f085 n-channel power trench ? mosfet
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